Is there any issue with etching using NIL resist? SCIVAX has addresses the issue of dry etching using NIL resist.
SCIVAX can perform etching on various substrate sizes, films and pattern geometries.
SCIVAX offers full etched film process development starting with the NIL patterned resist through optimizing of the etching process.
|■Films that can be etched||●Silicon ●SiOx ●Glass ●sapphire ●All types of metal layers ●All types of compound semiconductor layers|
|■Etching Geometries||●Hole ●Pillar ●Line&Space ●Cones ●Other|
|Pattern Size||●20nm～several tens of μm|
|■Equipment||●ICP & RIE Etchers|
Any issues regarding residual layers have been address by good understanding of how to control removal rates and process optimization.
SCIVAX can offer a solution even in the case where resist layers are too thin (i.e. with respect to the thickness of the target film and etch selectivity.
Etching wall angle can be controlled.
SCIVAX is able to provide consulting services regarding etching processes. Please feel free to inquire.
Limited to etching of NIL processed substrates.